Quantum leap in electronics: New material may replace silicon, boost speed 1,000x

With silicon-based electronics nearing their limits, experts stress that innovations in material science are essential, marking this breakthrough as a step toward redefining the foundational components of future high-performance technologies

In a major breakthrough that could reshape the future of computing and electronics, researchers at Northeastern University (Boston) have successfully demonstrated a method to control the electronic state of quantum materials on demand. The innovation could lead to devices that are up to 1,000 times faster and more efficient than current silicon-based technologies.

The team’s findings, published in Nature Physics, show how a material known as 1T-TaS₂ can be switched between conducting (metallic) and insulating states using a process called "thermal quenching" — a controlled cycle of heating and cooling. More remarkably, the state change can be triggered and reversed using light, and remains stable for months even at near-room temperatures.

“This ability to toggle a material’s electronic state instantly opens the door to creating much faster electronic components,” said Dr. Alberto de la Torre, assistant professor of physics at Northeastern and lead researcher on the project. “While today’s processors operate in the gigahertz range, this method could enable performance in the terahertz range.”

The team achieved a previously elusive "hidden metallic state" at practical temperatures, bypassing the need for cryogenic conditions. This represents a significant leap in efforts to integrate quantum materials into real-world devices.

Redefining foundations of electronics

Traditionally, electronic systems require separate materials for conduction and insulation, linked by complex interfaces. The Northeastern researchers propose a radical simplification — a single quantum material that can serve both functions, activated by light. “This eliminates a major engineering hurdle,” noted Professor Gregory Fiete, who co-authored the study. “We’re replacing the traditional interface between materials with a beam of light.”

The development builds upon earlier research using ultra-fast lasers to momentarily alter a material’s conductivity. However, previous effects were fleeting and required extreme cooling. In contrast, this new method delivers long-lasting and reversible state changes, offering a stable foundation for future electronic applications.

Experts say the implications extend far beyond conventional electronics. With silicon-based systems nearing their performance limits, innovations in material science are becoming critical. “We’re at a point where further gains require a new paradigm,” added Fiete. “This work is a step toward redefining the fundamental building blocks of technology.”