NXP has announced the expansion of its eighth-generation (Gen8) LDMOSRF power transistor portfolio for wireless base stations.
Designed for cost-sensitive applications, the new Gen8 LDMOS transistors offer P1dB powers up to 270 watts in SOT502-sized packages, and 400 watts in SOT539-sized packages. NXP will showcase its latest Gen8 LDMOS transistors at next week's MTT-S International Microwave Symposium 2012 in Montreal, Canada.
Christophe Cugge, Director - Marketing, base station power amplifiers, NXP Semiconductors, said, "After several months of development and testing, we are very pleased to release the newest members of our high-performance Gen8 LDMOS RF power transistor family. With optimized packaging, die design, and input and output match structures, NXP Gen8 is emerging as the platform of choice for multi-standard wideband Doherty power amplifiers that are highly compact, cost-effective and power-efficient."
